Strain induced ferroelectrosity in epitaxial SrTiO3 films

Citation
S. Gevorgian et al., Strain induced ferroelectrosity in epitaxial SrTiO3 films, INTEGR FERR, 33(1-4), 2001, pp. 311-321
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
33
Issue
1-4
Year of publication
2001
Pages
311 - 321
Database
ISI
SICI code
1058-4587(2001)33:1-4<311:SIFIES>2.0.ZU;2-8
Abstract
Microwave performances of planar capacitors Formed on epitaxial SrTiO3 (STO ) films reveal that two-dimensional, in-plane strain in the film lead to a formation of a stable non-cubic, low symmetry ferroelectric phase. The resi dual polarization vector has two stable states, normal to the film surface. and may be switched under applied DC bias. Due to the charges in surface/i nterface levels, the films may contain either a single or opposing domains.