A drain current data capture system for metal-ferroelectric-semiconductor field-effect transistors

A data capture system was developed to measure drain current as a function of gate-to-source voltage and drain-to-source voltage for Metal-Ferroelectr ic-Semiconductor Field-Effect Transistors (MFSFETs). Data from active hyste resis, remanent hysteresis, and retention tests were collected. The system consisted of an IBM-compatible PC equipped with an analog data acquisition system and a General Purpose Interface Bus (GPIB) controller, a voltage pul se generator, a custom MFSFET evaluation circuit, dual power supplies, and several custom software modules. Software modules were written to collect d rain current data from all of the MFSFETs simultaneously, while controlling drain voltage, pulse width, and gate voltage pulse waveform sequencing rem otely. System capabilities were: drain voltage from 0 to 10 volts, gate vol tage from -16 to +16 volts, and pulse width from 1 mu sec to 0.999 sec. The system allowed a high degree of flexibility and customization with regard to system inputs and facilitated completely automated testing.