Growth and characterization of epitaxial SrBi2Ta2O9 films on (110) SrTiO3 substrates

Citation
A. Garg et al., Growth and characterization of epitaxial SrBi2Ta2O9 films on (110) SrTiO3 substrates, INTEGR FERR, 31(1-4), 2000, pp. 13-21
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
31
Issue
1-4
Year of publication
2000
Pages
13 - 21
Database
ISI
SICI code
1058-4587(2000)31:1-4<13:GACOES>2.0.ZU;2-P
Abstract
SrBi2Ta2O9 (SBT) is an attractive material for nonvolatile ferroelectric me mory applications. In this paper we report on the deposition of highly epit axial and smooth SrBi2Ta2O9 films on (110) SrTiO(3)substrates. The films we re grown by pulsed laser deposition at temperatures ranging from 600 to 800 degreesC and at various laser fluences from a Bi-excess SET target. The ba ckground oxygen pressure was maintained at 28 Pa during the film deposition . Structural characterization of the films was performed by x-ray diffracti on. Atomic force microscopy was used to investigate morphology and growth o f the films. The films grew with preferred (115) or (116) orientation. The roughness was of the order of unit cell height. The films display a growth pattern resulting in corrugated film morphology.