Crystalline and optical properties of PLZT films prepared by pulsed laser deposition

Citation
Js. Kao et al., Crystalline and optical properties of PLZT films prepared by pulsed laser deposition, INTEGR FERR, 31(1-4), 2000, pp. 69-75
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
31
Issue
1-4
Year of publication
2000
Pages
69 - 75
Database
ISI
SICI code
1058-4587(2000)31:1-4<69:CAOPOP>2.0.ZU;2-T
Abstract
The PLZT(3/66/34), PLZT(3/46/54), PLZT(9/65/35) and PLZT(28/0/100) thin fil ms were deposited on MgO(100), Sapphire(0001) and fused silica substrates b y using pulsed KrF excimer laser deposition technique. The conventional in- situ and 2-step heating processes were utilized to facilitate the synthesis of a large area of uniform PLZT thin film. Pure perovskite phase can be ob tained only under very narrow process conditions, the highly textured PLZT films can be easily obtained by in-situ heating process. For PLZT(28/0/100) material, epitaxial films were successfully coated on MgO(100) substrates by 600 degreesC in-situ and RTA 650 degreesC 2-step heating processes. The latter was found to possess higher refractive index and lower extinction co efficient.