Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

Applying voltage between the conductive tip in atomic force microscopy (AFM ) and bottom electrode through Pb(Zr,Ti)O-3 (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains i n nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) si ze dependence on applied voltage and pulse width, are discussed. The bit si ze showed a log-linear dependence on the pulse width and a linear dependenc e on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was esti mated.