Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

Authors
Choi, ES Shin, WC Suh, TS Park, SS Yoon, SG
Citation
Es. Choi et al., Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor, INTEGR FERR, 31(1-4), 2000, pp. 297-304
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
31
Issue
1-4
Year of publication
2000
Pages
297 - 304
Database
ISI
SICI code
1058-4587(2000)31:1-4<297:BESOPA>2.0.ZU;2-P
Abstract
The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-S i) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700 degreesC for Ih in oxygen at mosphere showed a smooth surface microstructure without any second phases o n the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/ Ru/poly-Si structures annealed at 800 degreesC was about 1.5 x 10(-5) Omega .cm(2). The step coverage of Ru film deposited at 150 degreesC was 76 % an d those of Pt film deposited at 300 degreesC on Ru (deposited at 150 degree sC) was about 61.3 %.