The electronic and structural properties of the 90 degrees glide parti
al dislocation in diamond are investigated using an ab initio local de
nsity functional cluster method. The core C-C bond is found to be reco
nstructed with a bond length 5% longer than that in bulk diamond. The
formation and migration energy of the kink on the dislocation are calc
ulated to be 0.32 and 2.97 eV respectively. Further, the shift; of the
gap levels during kink motion suggests that p-type doping will lead t
o an increase in the mobility of the partial.