DEEP-LEVEL TRANSIENT-SPECTROSCOPY FOR LOCALIZED STATES AT EXTENDED DEFECTS IN SEMICONDUCTORS

We prove that for localized states at extended defects the high-temper ature sides of deep-level transient spectra can be written as a produc t of an amplitude function depending on the pulse length and a shape f unction depending on temperature. By this property localized states ca n be distinguished experimentally from bandlike states. Simulations of deep level transient spectra for localized and bandlike states using the same density of states function and parameter values illustrate th e differences and show the failures of conventional analysis in both c ases.