ENERGY-LEVELS ASSOCIATED WITH EXTENDED DEFECTS IN PLASTICALLY DEFORMED N-TYPE SILICON

Deep Level Transient Spectroscopy (DLTS) investigations of plastically deformed, n-type silicon have been performed. DLTS spectra revealed f our lines usually found in deformed silicon but they were unusually do minated by a broadened level located at 0.40 eV from the conduction ba nd edge. This trap resulted to be the most localized at the dislocatio ns, while the other traps are probably related to point defects. The m easured DLTS line widths have been simulated by the introduction of a broadening parameter delta, whose dependence on the dislocation densit y has been studied. Some hypotheses on the physical mechanisms respons ible for the line broadening have been advanced. A tentative identific ation of the defects responsible for the deep levels observed has been performed.