NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD

The possibilities and limitations of non-destructive extended defect c haracterization techniques, i.e. X-ray topography, carrier recombinati on imaging and laser scattering tomography are illustrated by a case s tudy whereby a dislocation problem occurred during the local isolation step of a CMOS compatible diode process. It is shown that the diode y ield is correlated with the presence of dislocations observed after th e full process. The ''in process'' application of the techniques is il lustrated by investigating defect formation after different local isol ation processes.