Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

Authors
Shimamura, K Baldochi, SL Ranieri, IM Sato, H Fujita, T Mazzocchi, VL Parente, CBR Paiva-Santos, CO Santilli, CV Sarukura, N Fukuda, T
Citation
K. Shimamura et al., Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere, J CRYST GR, 223(3), 2001, pp. 383-388
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
223
Issue
3
Year of publication
2001
Pages
383 - 388
Database
ISI
SICI code
0022-0248(200103)223:3<383:CGOCAU>2.0.ZU;2-A
Abstract
Ce-doped and undoped LiCaAlF6 (LiCAF) single crystals 50 mm in diameter wer e grown by the Czochralski technique. The formation of inclusions and crack s accompanying the crystal growth was investigated. The dependence of latti ce parameters on the temperature was measured for LiCAF and LiSrAlF6 single crystals. Linear thermal expansion coefficients for both these crystals we re evaluated. Higher transmission properties for LiCAF single crystals were achieved in the UV and VUV wavelength regions. (C) 2001 Elsevier Science B .V. All rights reserved.