CuSbS2 thin film formed through annealing chemically deposited Sb2S3-CuS thin films

We report a method to produce CuSbS2 thin films through a solid state react ion at 400 degreesC involving thin films of Sb2S3 (0.5 mum) and CuS. The pr ecursor thin films were produced by chemical bath deposition on glass subst rates, Thin films of Sb2S3 were deposited at 10 degreesC using thiosulfatoa ntimonate(III) complex. Subsequently, thin films of CuS were deposited onto these films from a bath containing thiosulfato complex of copper and dimet hylthiourea. The formation of the ternary compound upon annealing the Sb2S3 -CuS films was confirmed by X-ray diffraction. The estimated grain diameter of the material formed is about 20 nm. A direct optical band gap of 1.52 e V and a p-type electrical conductivity of 0.03 Omega (-1) cm(-1) are eviden ced. CuSbS2 is a material investigated for ferroelectric properties (Curie temperature 93 degreesC). The characteristics reported here also offer pers pective for CuSbS2 as an absorber material in solar cell application. (C) 2 001 Published by Elsevier Science B.V.