Bm. Ataev et al., Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/alpha-Al2O3, J PHYS-COND, 13(9), 2001, pp. L211-L214
We present the first results on (0001) ZnO/(0001) epi-GaN/(0001) alpha -Al2
O3 heterostructure fabrication combining metal-organic vapour phase epitaxy
and low-pressure chemical vapour deposition methods. The surface morpholog
ies of the films were studied, and x-ray and reflection high-energy electro
n diffraction measurements were made, which showed a high degree of structu
ral perfection of the ZnO films, with crystallite misorientation as low as
21'. The measured photoluminescence spectra of the films featured prevailin
gly emission within the excitonic region.