Synthesis and characterization of regiorandom and regioregular poly(3-octylfuran)

Citation
Jk. Politis et al., Synthesis and characterization of regiorandom and regioregular poly(3-octylfuran), J AM CHEM S, 123(11), 2001, pp. 2537-2547
Citations number
92
Categorie Soggetti
Chemistry & Analysis",Chemistry
Journal title
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN journal
00027863 → ACNP
Volume
123
Issue
11
Year of publication
2001
Pages
2537 - 2547
Database
ISI
SICI code
0002-7863(20010321)123:11<2537:SACORA>2.0.ZU;2-J
Abstract
Poly(3-octylfuran) has been synthesized with three regioregularities: P3OPF -95, P30F-75, and P3OF-50, where the number signifies the percentage HT con tent. The 95% HT material is highly crystalline with a structure similar to that of HT-poly(3-octylthiophene), P3OT. The lamellar spacing is 22.1 Angs trom and the pi -stacking distance is 3.81 Angstrom. W-vis spectroscopy rev eals that P3OF-95 is aggregated in CHCl3 solution, and solid films of P3OF- 95, but not P3OF-75 or -50, show Davydov and exciton band splitting due to the interactions of the pi -systems in the stacked morphology. An estimate of the Davydov splitting is 0.15 eV (1200 cm(-1)). P3OF is reversibly oxidi zed at 0.32 V vs ferrocene/ferrocenium, but increasing the potential to 1.1 5 V leads to irreversible oxidation. Films of P3OF may be p-doped with iodi ne vapor. Doped P3OF-95 and -75 films have electrical conductivities of 10( -2) and: 10(-7) S/cm, respectively. The UV-vis-NIR spectra of the iodine-do ped films are interpreted in terms of molecular-like transitions involving the LUMO, HOMO, HOMO-1, and transitions across a Peierls distortion-induced gap in the intermolecular conduction band that is formed by the overlap of the pi -systems of the stacked partially oxidized chains. The conduction b and gap estimated for P3OF-95 is 0.34 eV, and that for P30F-75 is 0.9 eV. T he P3OF samples are thermally stable in N-2 atmosphere to between 275 degre esC (P3OF-50) and 380 degreesC (P3OF-95), but suffer thermal oxidation abov e 150 degreesC or light-induced oxidation at room temperature.