Citation
A. Giraud et al., Chemical nucleation for CVD diamond growth, J AM CHEM S, 123(10), 2001, pp. 2271-2274
Citations number
51
Categorie Soggetti
Chemistry & Analysis",Chemistry
Journal title
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN journal
00027863
→ ACNP
Volume
123
Issue
10
Year of publication
2001
Pages
2271 - 2274
Database
ISI
SICI code
0002-7863(20010314)123:10<2271:CNFCDG>2.0.ZU;2-P
Abstract
A new nucleation method to form diamond by chemically pretreating silicon (
Ill)surfaces is reported. The nucleation consists of binding covalently 2,2
-divinyladamantane molecules on the silicon substrate. Then low-pressure di
amond growth was performed for 2 h via microwave plasma CVD in a tubular de
position system. The resulting diamond layers presented a good cristallinit
y and the Raman spectra showed a single very sharp peak at 1331 cm(-1), ind
icating high-quality diamonds.