Electrodeposition and nucleation of copper at nitrogen-incorporated tetrahedral amorphous carbon electrodes in basic ambient temperature chloroaluminate melts
Jj. Lee et al., Electrodeposition and nucleation of copper at nitrogen-incorporated tetrahedral amorphous carbon electrodes in basic ambient temperature chloroaluminate melts, J ELCHEM SO, 148(3), 2001, pp. C183-C190
The electrodeposition of copper on the atomically smooth nitrogen-incorpora
ted tetrahedral amorphous carbon (taC:N) electrode has been studied in basi
c ambient temperature AlCl3/1-ethyl-3-methylimidazolium chloroaluminate mel
ts. A high overpotential for nucleation of copper on taC:N and no underpote
ntial deposition features are observed, comparable to the behavior of boron
-doped diamond electrodes. Electrochemical deposition and stripping of copp
er on taC:N show that most of the deposit is anodically dissolved only when
the potential reaches that of Cu(I) oxidation in a system in which Cu(I) a
nd Cu(II) are both stable. The low density of intrinsic active sites for nu
cleation and its early saturation with increasing overpotential are respons
ible for the slight deviation from a model of the ideal progressive type of
nucleation at high overpotentials. (C) 2001 The Electrochemical Society. A
ll rights reserved.