Selective deposition of diamond film on glass substrate via the enhancement of the diamond nucleation density by the cyclic process

Citation
Sh. Kim et al., Selective deposition of diamond film on glass substrate via the enhancement of the diamond nucleation density by the cyclic process, J ELCHEM SO, 148(3), 2001, pp. C247-C251
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
148
Issue
3
Year of publication
2001
Pages
C247 - C251
Database
ISI
SICI code
0013-4651(200103)148:3<C247:SDODFO>2.0.ZU;2-M
Abstract
Diamond films were deposited on the pretreated silicon or on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition ( MPECVD) system. We can increase the diamond nucleation density by the cycli c process, irrespective of the substrate kinds and deposition conditions. U sing the cyclic process, we can certainly enhance the selective deposition of diamond film on glass substrate. The cyclic process is the in situ metho d carried out by the cyclic modulation of the CH, source gas flow rate duri ng the initial deposition stage. Surface morphologies and diamond qualities of the films have been investigated. Based on these results, we discuss th e cause for the enhancement of the selectivity of diamond film deposition o n glass substrate by the cyclic process. (C) 2001 The Electrochemical Socie ty.