Influence of growth pressure on an InGaAs/InGaAsP multiple quantum well selectively grown by using low-pressure metalorganic vapor phase epitaxy

We investigated the influence of growth pressure and stripe orientation on InGaAs/InGaAsP multiple quantum wells (MQWs) selectively grown by using low -pressure metalorganic Vapor phase epitaxy. The vapor-phase diffusion lengt h decreased exponentially with increasing growth pressure. The photolumines cence (PL) FWHM and the lateral uniformity of the PL intensity of the selec tively grown MQW layer improved with decreasing growth pressure. In additio n, the surface morphology near the mask edge: was better for the [110]-orie nted stripes than for the [110]-oriented stripes, and the PL intensity was also higher for the [110]-oriented stripes than for the [110]-oriented stri pes.