1.55 mu m spot-size converter integrated laser diode with a vertically tapered thickness waveguide using selective area metalorganic vapor phase epitaxy

We realized a 1.55-mum spot-size converter integrated laser diode (SSC-LD) with a vertically tapered thickness waveguide. A multiple quantum well (MQW ) active layer and a vertically tapered thickness waveguide were simultaneo usly grown using selective area metalorganic vapor phase epitaxy (MOVPE). A high growth enhancement of 4.3 in the LD active region and a photoluminesc ence wavelength shift as large as 240 nm in the SSC region were obtained by using an exponentially tapered mask. The SSC-LD exhibited a high slope eff iciency of 0.28 W/A without facet coating and a narrow circular beam diverg ence of 14 degrees x 15 degrees.