Effect of oxygen plasma treatment on anodic bonding

Citation
Sw. Choi et al., Effect of oxygen plasma treatment on anodic bonding, J KOR PHYS, 38(3), 2001, pp. 207-209
Citations number
7
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
38
Issue
3
Year of publication
2001
Pages
207 - 209
Database
ISI
SICI code
0374-4884(200103)38:3<207:EOOPTO>2.0.ZU;2-U
Abstract
Oxygen plasma surface treatment of silicon and glass was studied for improv ing the characteristics of anodic bonding. By using the sessile drop method , we confirmed that the surfaces activated by the oxygen plasma were render ed hydrophilic even at low r.f. power or short plasma exposure time. With i ncreasing plasma power and exposure time the surface roughness was observed to increase. The oxygen plasma treatment was significantly efficient in re ducing the impurities on the surface, which caused degradation in the bondi ng strength and the electrical property in interface. In the tensile test, the oxygen plasma treatment led to a higher bonding strength than the conve ntional anodic bonding method.