Effect of growth conditions on GaN grown by lateral epitaxial overgrowth

We investigated the effects of growth parameters on GaN structures grown by lateral epitaxial overgrowth (LEO) on SiNx/GaN/Al2O3 wafers by low-pressur e metalorganic chemical vapor deposition. The ratio of the lateral to the v ertical growth rates (gamma) increased with increasing growth temperature a nd V/III ratio. The crystallographic tilting of the LEO grown GaN strongly depended on the growth conditions. At low growth temperature and high react or pressure, y was less than unity, and the LEO grown GaN had a trapezoidal shape. Under these regrowth conditions, the tilt angle of LEO grown GaN de creased.