Ck. Hyon et al., Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope, J KOR PHYS, 38(3), 2001, pp. 251-254
A selective positioning technique for InAs quantum dots (QDs) on an atomic
force microscope (AFM)-patterned GaAs substrate has been proposed and imple
mented. AFM direct patterning was used to generate various patterns having
line widths of several tens of nanometers; then, InAs QDs were grown by usi
ng the metalorganic chemical vapor deposition technique. A nonuniform distr
ibution bf QDs was observed near the patterns, and the detailed shape of th
e QD distribution and the sizes of the QDs depended on the spacing and the
width of the patterns. The growth condition for the case where the QDs coul
d be aligned along the patterns was found in our work.