Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

Authors
Liu, XH Chen, XY Yin, J Liu, ZG Liu, JM Yin, XB Chen, GX Wang, M
Citation
Xh. Liu et al., Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates, J VAC SCI A, 19(2), 2001, pp. 391-393
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
391 - 393
Database
ISI
SICI code
0734-2101(200103/04)19:2<391:EGOTTF>2.0.ZU;2-M
Abstract
Rutile-phase TiO2 thin films have been epitaxially grown on GaAs(100) subst rates at 700 degreesC under 5 Pa oxygen ambient pressure. and at room tempe rature (30 degreesC) and 5x10(-4) Pa base vacuum by KrF pulsed excimer lase r deposition. The [110]-oriented TiO2 films were composed of two types of d omains perpendicular to each other in the plane. From atomic force microsco py analysis, the epitaxial films had a surface with roughness less than 7 n m in root-mean-square. (C) 2001 American Vacuum Society.