Plasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source

Citation
J. Xu et al., Plasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source, J VAC SCI A, 19(2), 2001, pp. 425-428
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
425 - 428
Database
ISI
SICI code
0734-2101(200103/04)19:2<425:PEDCPM>2.0.ZU;2-4
Abstract
The dc discharge of a planar magnetron was enhanced by a twinned microwave electron cyclotron resonance plasma source. The magnetic cusp geometry form ed in the processing chamber was used for plasma confinement, The sputterin g discharge characteristics were investigated and a combined mode of voltag e and current was observed at a pressure as low as 0.007 Pa. Carbon-nitride thin films were synthesized using this method. Characterization of the fil ms show that deposition rate was high, the films were composed of a single amorphous carbon nitride phase with N/C ratio close to that of C3N4, and th e bonding was mainly of C-N type. (C) 2001 American Vacuum Society.