Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry

Citation
Wmm. Kessels et al., Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry, J VAC SCI A, 19(2), 2001, pp. 467-476
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
467 - 476
Database
ISI
SICI code
0734-2101(200103/04)19:2<467:CRDDOS>2.0.ZU;2-I
Abstract
Spatially resolved SiH3 measurements are performed by cavity ring down spec troscopy on the SiH3 (A) over tilde (2)A(1)<--(A) over tilde (2)A(1) transi tion at 217 nm in a remote Ar-H-2-SiH4 plasma used for high rate deposition of hydrogenated amorphous silicon. The obtained densities of SiH3 and its axial and radial distribution in the cylindrical deposition reactor are com pared with simulations by a two-dimensional axisymmetric fluid dynamics mod el. The model, in which only three basic chemical reactions are taken into account, shows fairly good agreement with the experimental results and the plasma and surface processes as well as transport phenomena in the plasma a re discussed. Furthermore, the SiH3 density determined by cavity ring down spectroscopy is in good agreement with the SiH3 density as obtained by thre shold ionization mass spectrometry. (C) 2001 American Vacuum Society.