Citation
T. Mitsui et al., Adsorption of TPCl4 and initial stages of Ti growth on Si(001), J VAC SCI A, 19(2), 2001, pp. 563-567
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101
→ ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
563 - 567
Database
ISI
SICI code
0734-2101(200103/04)19:2<563:AOTAIS>2.0.ZU;2-V
Abstract
Adsorption of TiCl4 and Ti growth on Si(001) were investigated over a range
of temperatures by scanning tunneling microscopy. At 300 K, intact TiCl4,
Ti and Cl, and mobile TiCl2, are identified on the Si surface. At higher te
mperatures, deposition initially produces two-dimensional Ti islands, and c
ontinued deposition produces three-dimensional clusters. Above 630 K, both
Si and Ti islands and Si/Ti clusters are formed. However, cluster growth is
limited by Cl passivation of Si and Ti surfaces below 950 K. Above 950 K,
the tops of partially submerged titanium silicide crystals are observed. (C
) 2001 American Vacuum Society.