Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy

Citation
Vm. Bermudez et Wj. Desisto, Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy, J VAC SCI A, 19(2), 2001, pp. 576-583
Citations number
67
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
576 - 583
Database
ISI
SICI code
0734-2101(200103/04)19:2<576:SOCOFG>2.0.ZU;2-L
Abstract
Polarization-modulated infrared reflection absorption spectroscopy (aided b y numerical modeling) is demonstrated as a potentially useful tool for the study of the chemistry of materials growth and processing under steady-stat e conditions. This approach is applied to a preliminary investigation of th e growth of Cr oxide films at low-temperature (less than or equal to 270 de greesC) on Al2O3 using Cr(CO)(6) and O-2. The use of a buried metal layer a nd of polarization modulation enables detection of surface species with goo d sensitivity in the presence of strong absorption by gas-phase molecules. Cr(CO)(6) weakly interacting with Al2O3 and Cr oxide surfaces has been obse rved under equilibrium conditions, and a desorption energy of similar to 11 kcal/mol has been deduced from the temperature-dependent intensity of the upsilon (6)(t(1u)) carbonyl stretching mode. The 735 cm(-1) longitudinal op tic mode of Cr2O3 is observed during steady-state growth and simulated usin g the multilayer Fresnel relations for polarized reflectance. The growth is found to be first order in the Cr(CO)(6) pressure under the present condit ions.