Vm. Bermudez et Wj. Desisto, Study of chromium oxide film growth by chemical vapor deposition using infrared reflection absorption spectroscopy, J VAC SCI A, 19(2), 2001, pp. 576-583
Polarization-modulated infrared reflection absorption spectroscopy (aided b
y numerical modeling) is demonstrated as a potentially useful tool for the
study of the chemistry of materials growth and processing under steady-stat
e conditions. This approach is applied to a preliminary investigation of th
e growth of Cr oxide films at low-temperature (less than or equal to 270 de
greesC) on Al2O3 using Cr(CO)(6) and O-2. The use of a buried metal layer a
nd of polarization modulation enables detection of surface species with goo
d sensitivity in the presence of strong absorption by gas-phase molecules.
Cr(CO)(6) weakly interacting with Al2O3 and Cr oxide surfaces has been obse
rved under equilibrium conditions, and a desorption energy of similar to 11
kcal/mol has been deduced from the temperature-dependent intensity of the
upsilon (6)(t(1u)) carbonyl stretching mode. The 735 cm(-1) longitudinal op
tic mode of Cr2O3 is observed during steady-state growth and simulated usin
g the multilayer Fresnel relations for polarized reflectance. The growth is
found to be first order in the Cr(CO)(6) pressure under the present condit
ions.