Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

Authors
Piwonski, T Sajewicz, P Kubica, JM Zbroszczyk, M Reginski, K Mroziewicz, B Bugajski, M
Citation
T. Piwonski et al., Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy, MICROW OPT, 29(2), 2001, pp. 75-77
Citations number
3
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
29
Issue
2
Year of publication
2001
Pages
75 - 77
Database
ISI
SICI code
0895-2477(20010420)29:2<75:LSIQLG>2.0.ZU;2-3
Abstract
The operation in the 1020 nm wavelength range of strained-layer InGaAs/GaAs separate-confinement-heterostructure lasers grown by molecular beam epitax y is reported. The active region is formed by a single 80 Angstrom thick In GaAs quantum well with an indium content of 25%, which is close to critical parameters. This paper provides the operating characteristics of broad-are a uncoated Fabry-Perot structures with cavities of 700 mum length measured in the pulsed regime. (C) 2001 John Wiley & Sons, Inc.