High energy electron irradiation of ion implanted MOS structures with different oxide thickness

Authors
Kaschieva, S Alexandrova, S
Citation
S. Kaschieva et S. Alexandrova, High energy electron irradiation of ion implanted MOS structures with different oxide thickness, NUCL INST B, 174(3), 2001, pp. 324-328
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
174
Issue
3
Year of publication
2001
Pages
324 - 328
Database
ISI
SICI code
0168-583X(200104)174:3<324:HEEIOI>2.0.ZU;2-L
Abstract
The effects of 11 MeV electron irradiation of boron ion implanted Si-SiO2 s tructures with different oxide thickness have been investigated by thermall y stimulated charge (TSC) method. It has been shown that electron irradiati on of implanted with 20 keV boron ions structures results in the formation of a trap spectrum which locales in the same temperature range as the spect rum of the as-implanted samples. The density of radiation-induced interface traps after electron irradiation has been found to depend on the dispositi on of the maximum of the previously implanted boron ions with respect to th e Si-SiO2 interface. (C) 2001 Elsevier Science B.V. All rights reserved.