S. Kaschieva et S. Alexandrova, High energy electron irradiation of ion implanted MOS structures with different oxide thickness, NUCL INST B, 174(3), 2001, pp. 324-328
The effects of 11 MeV electron irradiation of boron ion implanted Si-SiO2 s
tructures with different oxide thickness have been investigated by thermall
y stimulated charge (TSC) method. It has been shown that electron irradiati
on of implanted with 20 keV boron ions structures results in the formation
of a trap spectrum which locales in the same temperature range as the spect
rum of the as-implanted samples. The density of radiation-induced interface
traps after electron irradiation has been found to depend on the dispositi
on of the maximum of the previously implanted boron ions with respect to th
e Si-SiO2 interface. (C) 2001 Elsevier Science B.V. All rights reserved.