Dynamic process of self-started self-mode-locked Ti : sapphire laser with a semiconductor saturable absorber mirror

Authors
Wang, CY Wang, Y Chai, L Zhang, WL Xing, QR Zhang, ZG
Citation
Cy. Wang et al., Dynamic process of self-started self-mode-locked Ti : sapphire laser with a semiconductor saturable absorber mirror, OPT LASER T, 33(2), 2001, pp. 81-83
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
33
Issue
2
Year of publication
2001
Pages
81 - 83
Database
ISI
SICI code
0030-3992(200103)33:2<81:DPOSST>2.0.ZU;2-F
Abstract
Dynamic process of self-started self-mode-locked Ti:sapphire laser with a s emiconductor saturable absorber mirror (SESAM) was investigated and two mod e-locking starting processes were found in which one is fast and the other is slow. In the fast starting process, a mode-locking build-up time of abou t 400 mus was needed during which pure passive mode-locking process was cau sed by the SESAM and Kerr-lens mode-locking process arose from the nonlinea rity of the Ti:sapphire gain medium. In the slow starting process, a build- up time of about several minutes was found in which temperature effect of t he SESAM dominates the dynamic process. (C) 2001 Elsevier Science Ltd. All rights reserved.