Type-I InSb-based mid-infrared diode lasers

Authors
Citation
T. Ashley, Type-I InSb-based mid-infrared diode lasers, PHI T ROY A, 359(1780), 2001, pp. 475-488
Citations number
11
Categorie Soggetti
Multidisciplinary
Journal title
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
ISSN journal
1364503X → ACNP
Volume
359
Issue
1780
Year of publication
2001
Pages
475 - 488
Database
ISI
SICI code
1364-503X(20010315)359:1780<475:TIMDL>2.0.ZU;2-G
Abstract
Significant developments in mid-infrared lasers have been made in recent ye ars towards the goal of minimally cooled operation with useful output power s through the use of type-I structures made from III-V semiconductors. In p articular, the use of strain in such devices to suppress non-radiative loss es such as Auger recombination and intervalence-band absorption has shown p romise. The indium-aluminium-gallium-antimonide (In1-x-yAlxGaySb) materials system offers an excellent compromise between the requirements for good el ectronic and optical confinement and those for low series resistance necess ary for efficient diode laser operation across the 3-5 mum wavelength range . We present data from diode lasers, grown by molecular beam epitaxy, compr ising compressively strained InSb-like wells within In1-x-yAlxGaySb confini ng regions and In1-xAlxSb cladding layers. At 77 K the threshold current de nsity is less than 50 A cm(-2) and differential efficiency as high as 30% p er facet for devices with an emission wavelength of 3.4 mum. The maximum te mperature of operation demonstrated to date is 170 K; however, theory indic ates that, with optimization of well and barrier parameters, minimally cool ed operation should be attainable.