Resonant tunneling into a biased fractional quantum Hall edge

We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleav ed-edge overgrown devices. The resonances demonstrate different tunnel coup lings to the metallic lead and the FQHE edge. Weak coupling lo the FQHE edg e produces clear non-Fermi liquid behavior with a sixfold increase in reson ance area under bias arising from the power law density of states at the FQ HE edge. A simple device model uses the resonant tunneling formalism for ch iral Luttinger liquids to successfully describe the data.