The effect of oxygen precipitates on the recombination characteristics of silicon

Authors
Bulyarskii, SV Ambrozevich, AS Svetukhin, VV Dzhabrailov, TA
Citation
Sv. Bulyarskii et al., The effect of oxygen precipitates on the recombination characteristics of silicon, TECH PHYS L, 27(3), 2001, pp. 200-201
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
3
Year of publication
2001
Pages
200 - 201
Database
ISI
SICI code
1063-7850(2001)27:3<200:TEOOPO>2.0.ZU;2-E
Abstract
The recombination characteristics of silicon single crystals containing oxy gen precipitates were studied. It is demonstrated that the reverse-bias cur rent-voltage characteristics can be improved by annealing the samples at 95 0 degreesC. (C) 2001 MAIK "Nauka / Interperiodica".