Investigation of silicon implanted with carbon ions

Authors
Bulyarskii, SV Ambrozevich, AS Moliver, SS Dzhabrailov, TA Bayazitov, RM Batalov, RI
Citation
Sv. Bulyarskii et al., Investigation of silicon implanted with carbon ions, TECH PHYS L, 27(3), 2001, pp. 254-255
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
3
Year of publication
2001
Pages
254 - 255
Database
ISI
SICI code
1063-7850(2001)27:3<254:IOSIWC>2.0.ZU;2-J
Abstract
The properties of silicon single crystals implanted with carbon ions were s tudied by two independent methods. It is demonstrated that the concentratio n of implanted carbon can be monitored by measuring the density of divacanc ies. (C) 2001 MAIK "Nauka / Interperiodica".