INFRARED MATERIALS ACTIVITIES AT GEC-MARCONI-INFRARED-LIMITED .2. EPITAXIAL-GROWTH TECHNIQUES

Citation
Es. Okeefe et al., INFRARED MATERIALS ACTIVITIES AT GEC-MARCONI-INFRARED-LIMITED .2. EPITAXIAL-GROWTH TECHNIQUES, GEC JOURNAL OF TECHNOLOGY, 14(1), 1997, pp. 7-18
Citations number
34
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
13670476
Volume
14
Issue
1
Year of publication
1997
Pages
7 - 18
Database
ISI
SICI code
1367-0476(1997)14:1<7:IMAAG.>2.0.ZU;2-9
Abstract
This paper follows on from Part I (bulk growth techniques) which appea red in the previous issue of this Journal. The history and current sta tus of liquid phase epitaxy, LPE, and metal-organic vapour phase epita xy, MOVPE, processes are described in this paper. Epitaxial growth by LPE satisfies current requirements for large areas of uniform material for staring focal plane arrays (FPAs). Research work on MOVPE for the growth of heterostructures aimed at the next generation of IR detecto rs based on non-equilibrium operation is described.