Multi-value voltage-to-voltage converter using a multi-stage symmetrical charge pump for on-chip EEPROM programming

Citation
M. Zhang et al., Multi-value voltage-to-voltage converter using a multi-stage symmetrical charge pump for on-chip EEPROM programming, ANALOG IN C, 27(1-2), 2001, pp. 83-93
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
ISSN journal
09251030 → ACNP
Volume
27
Issue
1-2
Year of publication
2001
Pages
83 - 93
Database
ISI
SICI code
0925-1030(200104)27:1-2<83:MVCUAM>2.0.ZU;2-A
Abstract
A fully integrated multi-stage symmetrical structure charge pump and its ap plication to a multi-value voltage-to-voltage converter for on-chip EEPROM programming are presented. The multi-value voltage-to-voltage converter is designed to offer two output voltages, power supply and triple power supply alternatively, which is needed for a memory array. A dynamic analysis of t he multi-stage symmetrical structure charge pump and an optimization design in terms of circuit area are also given. The circuit is implemented in a 1 .2 mu CMOS process and the measurement results show that a voltage pulse as short as 5 mus with a rise time of 3 mus is obtained. For a 5 V power supp ly and with a resistive charge of 100 k Omega, the programming output volta ge can reach as high as 11 V and output current for programming is over 110 muA, which are high enough to program the memory cell.