A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology

Authors
Schuppener, G Mokhtari, M Kerzar, B
Citation
G. Schuppener et al., A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology, ANALOG IN C, 27(1-2), 2001, pp. 127-134
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
ISSN journal
09251030 → ACNP
Volume
27
Issue
1-2
Year of publication
2001
Pages
127 - 134
Database
ISI
SICI code
0925-1030(200104)27:1-2<127:A5GLNA>2.0.ZU;2-U
Abstract
A monolithic integrated low-noise amplifier for operation in the 5.8-GHz ba nd is described. Two different versions have been implemented where the bia sing was adapted to allow operation over a different range of supply voltag e. At 5-V, the amplifiers gain is about 17-dB, with a noise figure of 4.2-d B and 1-dB compression point at -15-dBm input power. The circuits have been designed utilizing a 0.6-micron silicon bipolar production technology, fea turing npn transistors with f(T) and f(max) of about 20-GHz.