Exchange processes in interlayer diffusion - kinks, corners and the growthmode

Citation
M. Schmid et al., Exchange processes in interlayer diffusion - kinks, corners and the growthmode, APPL PHYS A, 72(4), 2001, pp. 405-412
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
72
Issue
4
Year of publication
2001
Pages
405 - 412
Database
ISI
SICI code
0947-8396(200104)72:4<405:EPIID->2.0.ZU;2-P
Abstract
Interlayer diffusion, i.e. mass transport between different terraces, is kn own to be an essential process for obtaining layer-by-layer growth, avoidin g formation of three-dimensional (3D) islands when growing thin films. We p resent experimental results for the growth of cobalt on Pt(111), which demo nstrate the importance of kinks and corners for interlayer diffusion. We sh ow that Co grows two-dimensionally as long as strain caused by the Pt-Co in terface keeps the step edges rough, with a high kink density, and then tran sforms to 3D growth with straight steps. The results for growth with adsorb ed carbon monoxide show that CO acts as a surfactant, causing two-dimension al growth unless heterogeneous nucleation occurs. Again, this process is re lated to roughening of the steps, being a new mechanism for the action of a surfactant. A scanning tunneling microscopy study at the atomic scale conf irms the fact that step descent happens only at kinks and (concave) corners , and in conjunction with simulations allows us to identify some of the rel evant atomic-exchange processes. We finally argue that the dependence of th e growth mode on the step morphology, together with straightening of the st eps by step-step interaction, can lead to an instability of the growth mode .