Near-infrared electroluminescence of polymer light-emitting diodes doped with a lissamine-sensitized Nd3+ complex

Citation
Lh. Slooff et al., Near-infrared electroluminescence of polymer light-emitting diodes doped with a lissamine-sensitized Nd3+ complex, APPL PHYS L, 78(15), 2001, pp. 2122-2124
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
15
Year of publication
2001
Pages
2122 - 2124
Database
ISI
SICI code
0003-6951(20010409)78:15<2122:NEOPLD>2.0.ZU;2-G
Abstract
We report 890 nm luminescence from a neodymium-doped polymer light-emitting diode. The active layer is a blend of poly(dioctylfluorene-co-benzothiadia zole), F8BT, and a lissamine-functionalized terphenyl-based neodymium compl ex. We detect electroluminescence from both the lissamine (580 nm) and the Nd3+ complex (890 nm). By comparison with lissamine-free devices we show th at the lissamine is crucial to infrared emission. The neodymium/lissamine l uminescence intensity ratio is higher under electrical excitation than unde r optical excitation, showing that more triplets reach Nd3+ under electrica l excitation. High turn-on voltages provide a clear indication for charge t rapping onto the lissamine, and we consider direct triplet formation on the lissamine to be competing efficiently with respect to slower Dexter-type t riplet transfer from the F8BT to the lissamine. (C) 2001 American Institute of Physics.