Enhancement of the molecular nitrogen dissociation levels by argon dilution in surface-wave-sustained plasmas

In this work, the nitrogen molecular dissociation level in Ar/N-2 surface-w ave plasma is evaluated as a function of plasma parameters such as Ar perce ntage in the gas mixture, power absorbed in the plasma, and total pressure in order to design an efficient N-atom source that can be used for various applications such as thin-film deposition and materials surface modificatio n. This plasma is operated at 40.68 MHz and the nitrogen dissociation rate is determined, in the remote plasma, by analyzing the optical emission of t he first positive molecular nitrogen band. For all operating conditions, th e dissociation rate ([N]/[N-2]) of N-2 molecules was enhanced, as the perce ntage of Ar in the mixture increased from 0 to similar to 95%, and dissocia tion rates higher than 2.5% were measured. This gain in the dissociation ra te became more pronounced when the plasma power and total pressure increase d from 40 to 120 W and from 4 to 7.5 Torr, respectively. These results are discussed in terms of the kinetics of the electrons, nitrogen atoms, and mo lecules and confirm theoretical kinetic models presented in the literature. (C) 2001 American Institute of Physics.