This letter reports on a process to prepare nanostructured PbTiO3 (PT) at r
oom temperature with photoluminescence (PL) emission in the visible range.
This process is based on the high-energy mechanical milling of ultrafine Pb
TiO3 powder. The results suggest that high-energy mechanical milling modifi
es the particle's structure, resulting in localized states in an interfacia
l region between the crystalline PT and the amorphous PT. These localized s
tates are believed to be responsible for the PL obtained with short milling
times. When long milling times are employed, the amorphous phase that is f
ormed causes PL behavior. An alternative method to process nanostructured w
ide-band-gap semiconductors with active optical properties such as PL is de
scribed in this letter. (C) 2001 American Institute of Physics.