Radiative recombination from InP quantum dots on (100) GaP

Authors
Hatami, F Masselink, WT Schrottke, L
Citation
F. Hatami et al., Radiative recombination from InP quantum dots on (100) GaP, APPL PHYS L, 78(15), 2001, pp. 2163-2165
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
15
Year of publication
2001
Pages
2163 - 2165
Database
ISI
SICI code
0003-6951(20010409)78:15<2163:RRFIQD>2.0.ZU;2-M
Abstract
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots is peaked at abo ut 2.0 eV, blueshifted by 0.6 eV from the band gap of bulk InP due to strai n, quantum size effects, and possibly Ga interdiffusion. (C) 2001 American Institute of Physics.