Conservation of flatband conditions for DySi2 monolayers on n-type Si(111)

We propose a low-resistivity metal/Si/DySi2/Si multilayer Ohmic contact to n-type Si. For a DySi2 monolayer on n-type Si(111), the Fermi level has bee n found to be located only 0.08 eV below the conduction-band minimum of Si, corresponding to flatband conditions. Here, we demonstrate that this Fermi -level position is conserved to a large extent upon Si overgrowth of the mo nolayer, allowing us to exploit the flatband conditions for device applicat ions under ambient conditions. (C) 2001 American Institute of Physics.