GaN bipolar junction transistors with regrown emitters

Small-area (3 X 10 mum emitter) GaN bipolar junction transistors (BJTs) inc orporating a superlattice GaN(Mg)/AlGaN(Mg) base contact layer and a select ively regrown emitter were fabricated using a self-aligned dry etch process . The dc current gains were typically 10 at 25 degreesC, and the devices we re operated up to emitter current densities of 15 kA cm(-2). The BJTs exhib ited high emitter injection efficiency, indicating the presence of a good i nterface between the initial epi structure and the regrown emitter. (C) 200 1 The Electrochemical Society. All rights reserved.