Novel polymeric surfactants for improving chemical mechanical polishing performance of silicon oxide

Citation
Wt. Tseng et al., Novel polymeric surfactants for improving chemical mechanical polishing performance of silicon oxide, EL SOLID ST, 4(5), 2001, pp. G42-G45
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
4
Issue
5
Year of publication
2001
Pages
G42 - G45
Database
ISI
SICI code
1099-0062(200105)4:5<G42:NPSFIC>2.0.ZU;2-#
Abstract
We investigated the impacts of novel surfactants on oxide chemical mechanic al polishing (CMP) performance. Silica-based potassium hydroxide was formul ated for this study. Two polymeric surfactants, methyl methacrylate (MMA)-b ased CHE and siloxane-based SHE, were added to the slurry for evaluation. P article size, viscosity, surface tension, and contact angle of slurries wer e characterized. Without surfactant, the silica-based slurry withstood up t o 8.5 wt % of solid loading before the silica abrasives segregate and settl e. With the addition of surfactant, however, the slurry held up to 15 wt % of solids without segregation. The CHE-added slurry yielded higher viscosit y and higher oxide CMP removal rate than SHE-added slurry, while the latter exhibited better colloidal dispersion characteristics and lower within-waf er nonuniformity. (C) 2001 The Electrochemical Society. All rights reserved .