2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes

Authors
Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation
B. Sumpf et al., 2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes, ELECTR LETT, 37(6), 2001, pp. 351-353
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
351 - 353
Database
ISI
SICI code
0013-5194(20010315)37:6<351:2ROOLG>2.0.ZU;2-M
Abstract
Reliable operation of 735nm laser diodes based on a tensile strained GaAsP quantum well embedded in an AlGaAs large optical cavity structure is report ed. The 100 mum stripe width laser diodes were aged at a record high output power of 2W for 2000 hours. The degradation rates were < 3.6 x 10 (5)h (1) .