Tunnel barrier properties of stressed ferromagnetic tunnel junctions

Authors
Das, J Degraeve, R Boeve, H Duchamps, P Lagae, L Groeseneken, G Borghs, G De Boeck, J
Citation
J. Das et al., Tunnel barrier properties of stressed ferromagnetic tunnel junctions, ELECTR LETT, 37(6), 2001, pp. 356-358
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
356 - 358
Database
ISI
SICI code
0013-5194(20010315)37:6<356:TBPOSF>2.0.ZU;2-X
Abstract
The oxide breakdown properties of ultra-thin (similar to1 nm), naturally ox idised Al2O3 tunnel barriers in magnetic tunnel junctions were studied usin g ramped and constant stress experiments. During stress measurements at 1.3 5V, a fast breakdown of the junction was observed. The time-to-breakdown is evaluated using Weibull statistics. as commonly utilised in SiO2 reliabili ty studies.