5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates

Authors
Modak, P D'Hondt, M Moerman, I Van Daele, P Mijlemans, P Demeester, P
Citation
P. Modak et al., 5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates, ELECTR LETT, 37(6), 2001, pp. 377-378
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
377 - 378
Database
ISI
SICI code
0013-5194(20010315)37:6<377:5EIMLA>2.0.ZU;2-2
Abstract
InAlGaP microactivity LEDs on Ge substrates emitting at 640nm with compress ively strained MQW active layers have: been fabricated. The external quantu m efficiency for a nonencapsulated MCLED was 5.2% at 4mA and the device emi tted 1.9mW at 20mA and nearly 8mW optical output power at an injection curr ent of 100mA.