16GHz low-power 1 : 4 prescalar fabricated in 1.0 mu m BiFET technology

Authors
Runge, K Zampardi, PJ Pierson, RL Penny, J
Citation
K. Runge et al., 16GHz low-power 1 : 4 prescalar fabricated in 1.0 mu m BiFET technology, ELECTR LETT, 37(6), 2001, pp. 389-390
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
389 - 390
Database
ISI
SICI code
0013-5194(20010315)37:6<389:1L1:4P>2.0.ZU;2-1
Abstract
An experimental 16GHz low-power 1:4 prescalar in 1 mum BiFET technology is reported. The: prescalar nas designed in both heterojunction bipolar (HBT) technology, and BiFET technology. The BiFET version utilised MESFET current sources. thereby reducing the supply voltage from -6.8 to -4.65V (-6 to -4 .15V at lower frequencies), which results in power savings of approximately 30%.