Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma

Authors
Chatterjee, S Samanta, SK Banerjee, HD Maiti, CK
Citation
S. Chatterjee et al., Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma, ELECTR LETT, 37(6), 2001, pp. 390-392
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
390 - 392
Database
ISI
SICI code
0013-5194(20010315)37:6<390:DOHZFO>2.0.ZU;2-2
Abstract
High dielectric constant (high-k) ZrO2 films have been deposited on straine d Si0.91Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(C H3)(3))(4)] by microwave plasma enhanced vapour deposition technique at a l ow temperature. Deposited ZrO2 films show good electrical properties and ar e suitable for microelectronic applications.